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Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi2Te4.
Guo, Cheng; Chen, Zhiqingzi; Yu, Xianbin; Zhang, Libo; Wang, Xueyan; Chen, Xiaoshuang; Wang, Lin.
Afiliação
  • Guo C; Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China.
  • Chen Z; State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China.
  • Yu X; Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China.
  • Zhang L; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Wang X; College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
  • Chen X; Department of Physics, Shanghai Normal University, 100 Guilin Rd, Shanghai 200234, China.
  • Wang L; State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China.
Nano Lett ; 22(18): 7492-7498, 2022 Sep 28.
Article em En | MEDLINE | ID: mdl-36094834
Terahertz photodetectors based on emergent intrinsic magnetic topological insulators promise excellent performance in terms of highly sensitive, anisotropic and room-temperature ability benefiting from their extraordinary material properties. Here, we propose and conceive the response features of exfoliated MnBi2Te4 flakes as active materials for terahertz detectors. The MnBi2Te4-based photodetectors show the sensitivity rival with commercially available ones, and the noise equivalent power of 13 pW/Hz0.5 under 0.275 THz at room-temperature led by the nonlinear Hall effect, allowing for the high-resolution terahertz imaging. In addition, a large anisotropy of polarization-dependent terahertz response is observed when the MnBi2Te4 device is tuned into different directions. More interestingly, we discover an unprecedented power-controlled reversal of terahertz response in the MnBi2Te4-graphene device. Our results provide feasibility of manipulating and exploiting the nontrivial topological phenomena of MnBi2Te4 under a high-frequency electromagnetic field, representing the first step toward device implementation of intrinsic magnetic topological insulators.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article