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Enhancing the stability of environmental resistance of alloyed CdZnSeS@ZnS quantum dots by doping Ti ions into shell layer.
Fang, Fan; Liu, Haochen; Wen, Zuoliang; Liu, Chenxi; Xu, Bing; Zhang, Zhikuan; Wang, Kai; Ertugrul, Mehmet; Lei, Wei; Sun, Xiao Wei.
Afiliação
  • Fang F; School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People's Republic of China.
  • Liu H; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhe
  • Wen Z; Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, People's Republic of China.
  • Liu C; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhe
  • Xu B; Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, People's Republic of China.
  • Zhang Z; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhe
  • Wang K; Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, People's Republic of China.
  • Ertugrul M; Shenzhen Planck Innovation Technologies Co. Ltd, Shenzhen 518055, People's Republic of China.
  • Lei W; Shenzhen Planck Innovation Technologies Co. Ltd, Shenzhen 518055, People's Republic of China.
  • Sun XW; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhe
Nanotechnology ; 33(50)2022 Oct 03.
Article em En | MEDLINE | ID: mdl-36108531
ABSTRACT
Colloidal quantum dots (QDs) are promising luminescent materials for display and lighting, but their stability has long been an issue. Here, we designed a passivation strategy of doping Ti ions into the shell of alloyed CdZnSeS@ZnS QDs. The results showed that Ti ions were successfully doped into the ZnS shell and the stability of QDs was improved. In the aging test, the Ti ions doped QDs maintained 51.4% of the initial performance after 90 h of aging, while the pristine QDs decreased to less than 25% of the initial value. In addition, we discuss the reasons why Ti ions doping improves the stability of QDs. Ti ions are found to form Ti-S bonds in the ZnS shell, which has high binding energy and strong oxidation resistance. Most importantly, since there is no external physical insulating coating, the optimized QDs can also be directly used in electroluminescent devices, showing great potential in electroluminescence applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article