P-Type 2D Semiconductors for Future Electronics.

Xiong, Yunhai; Xu, Duo; Feng, Yiping; Zhang, Guangjie; Lin, Pei; Chen, Xiang

Xiong, Yunhai; Xu, Duo; Feng, Yiping; Zhang, Guangjie; Lin, Pei; Chen, Xiang.

Afiliação

Xiong Y; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Xu D; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Feng Y; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Zhang G; CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.
Lin P; Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China.
Chen X; MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.

Adv Mater ; 35(50): e2206939, 2023 Dec.

Article em En | MEDLINE | ID: mdl-36245325

Palavras-chave

2D semiconductors; electronics; integrated circuit; p-type; post-Moore era

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article