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Two-dimensional van der Waals heterostructures (vdWHs) with band alignment transformation in multi-functional devices.
Shehzad, Nasir; Saeed, Shahzad; Shahid, Ismail; Khan, Imad; Saeed, Imran; Zapien, Juan Antonio; Zhang, Lixin.
Afiliação
  • Shehzad N; School of Physics, Nankai University Tianjin 300071 People's Republic of China.
  • Saeed S; Department of Physics, Rawalpindi Women University Rawalpindi 43600 Pakistan shehzadsaeed2003@yahoo.com.
  • Shahid I; Department of Materials Science and Engineering, City University of Hong Kong Hong Kong SAR PR China.
  • Khan I; School of Materials Science and Engineering, Computational Centre for Molecular Science, Institute of New Energy Material Chemistry, Nankai University Tianjin 300350 PR China.
  • Saeed I; Department of Physics, University of Malakand Chakdara, Dir (Lower) 18800 KP Pakistan.
  • Zapien JA; Institute of Basic Sciences, Centre for Soft and Living Matter, Ulsan National Institute of Science and Technology (UNIST) Ulsan 44919 Republic of Korea.
  • Zhang L; Department of Materials Science and Engineering, City University of Hong Kong Hong Kong SAR PR China.
RSC Adv ; 12(48): 31456-31465, 2022 Oct 27.
Article em En | MEDLINE | ID: mdl-36349014
ABSTRACT
Two-dimensional van der Waals heterostructures (vdWHs) with tunable band alignment have the potential to be benignant in the development of minimal multi-functional and controllable electronics, but they have received little attention thus far. It is crucial to characterize and control the band alignment in semiconducting vdWHs, which determines the electronic and optoelectronic properties. The future success of optoelectronic devices will require improved electronic property control techniques, such as using an external electric field or strain engineering, to change the electronic structures directly. Herein, we review heterostructures fabricated as transition metal dichalcogenides (TMDCs) as one of their constituent monolayers with other notable 2D materials that can transfer from type-II to type-III (type-III > type-II) band alignment when a biaxial strain or electric field is applied.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article