A new TCAD simulation method for direct CMOS electron detectors optimization.

Marcelot, O; Marcelot, C; Corbière, F; Martin-Gonthier, P; Estribeau, M; Houdellier, F; Rolando, S; Pertel, C; Goiffon, V

Marcelot, O; Marcelot, C; Corbière, F; Martin-Gonthier, P; Estribeau, M; Houdellier, F; Rolando, S; Pertel, C; Goiffon, V.

Afiliação

Marcelot O; ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France. Electronic address: olivier.marcelot@isae.fr.
Marcelot C; CEMES-CNRS, F-31055 Toulouse, France.
Corbière F; ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.
Martin-Gonthier P; ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.
Estribeau M; ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.
Houdellier F; CEMES-CNRS, F-31055 Toulouse, France.
Rolando S; ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.
Pertel C; CEMES-CNRS, F-31055 Toulouse, France.
Goiffon V; ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.

Ultramicroscopy ; 243: 113628, 2023 Jan.

Article em En | MEDLINE | ID: mdl-36371857

Palavras-chave

CMOS; CMOS integrated circuits; Electrons; Image sensor; Semiconductor detectors; Semiconductor device modelling; Simulation; Transmission electron microscopy

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article