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High thermoelectric performance of a Sc2Si2Te6 monolayer at medium temperatures: an ab initio study.
Shi, Wenwu; Ge, Nina; Yu, Sheng; Wu, Jiajing; Hu, Tao; Wei, Jun; Yan, Xiao; Wang, Xinzhong; Wang, Zhiguo.
Afiliação
  • Shi W; Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China. yanxiao@sziit.edu.cn.
  • Ge N; University of Electronic Science and Technology of China, Chengdu 610054, P. R. China. zgwang@uestc.edu.cn.
  • Yu S; State Key Laboratory of Environmental-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621000, P. R. China.
  • Wu J; Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China. yanxiao@sziit.edu.cn.
  • Hu T; Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China. yanxiao@sziit.edu.cn.
  • Wei J; Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China. yanxiao@sziit.edu.cn.
  • Yan X; Shenzhen Key Laboratory of Flexible Printed Electronics Technology, Harbin Institute of Technology (Shenzhen), University Town, Shenzhen, 518055, P. R. China.
  • Wang X; School of Science, Harbin Institute of Technology (Shenzhen), University Town, Shenzhen, 518055, P. R. China.
  • Wang Z; Shenzhen Institute of Information Technology, Shenzhen 518172, P. R. China. yanxiao@sziit.edu.cn.
Phys Chem Chem Phys ; 25(3): 1616-1626, 2023 Jan 18.
Article em En | MEDLINE | ID: mdl-36541178
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article