Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO<sub>2</sub> Insets.

Koroleva, Aleksandra A; Chernikova, Anna G; Zarubin, Sergei S; Korostylev, Evgeny; Khakimov, Roman R; Zhuk, Maksim Yu; Markeev, Andrey M

Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO₂ Insets.

Koroleva, Aleksandra A; Chernikova, Anna G; Zarubin, Sergei S; Korostylev, Evgeny; Khakimov, Roman R; Zhuk, Maksim Yu; Markeev, Andrey M.

Afiliação

Koroleva AA; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Chernikova AG; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Zarubin SS; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Korostylev E; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Khakimov RR; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Zhuk MY; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.
Markeev AM; Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow Region141700, Russia.

ACS Omega ; 7(50): 47084-47095, 2022 Dec 20.

Article em En | MEDLINE | ID: mdl-36570284

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article