Bulk-surface coupling in dual topological insulator Bi1Te1and Sb-doped Bi1Te1single crystals via electron-phonon interaction.

Mandal, Shoubhik; Mallick, Debarghya; Bitla, Yugandhar; Ganesan, R; Kumar, P S Anil

Bulk-surface coupling in dual topological insulator Bi₁Te₁and Sb-doped Bi₁Te₁single crystals via electron-phonon interaction.

Mandal, Shoubhik; Mallick, Debarghya; Bitla, Yugandhar; Ganesan, R; Kumar, P S Anil.

Afiliação

Mandal S; Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India.
Mallick D; Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India.
Bitla Y; Present address: Department of Physics and Astronomy, Rutgers, The State University of New Jersey, 136 Frelinghuysen Rd, Piscataway, NJ 08854, United States of America.
Ganesan R; Department of Physics, School of Physical Sciences, Central University of Rajasthan, Ajmer, Rajasthan 305817, India.
Kumar PSA; Department of Physics, Indian Institute of Science, Bengaluru, Karnataka 560012, India.

J Phys Condens Matter ; 35(28)2023 Apr 20.

Article em En | MEDLINE | ID: mdl-36731168

Palavras-chave

dual topological insulator; electron-phonon interaction; weak anti-localization

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article