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Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band.
Zha, Jiajia; Shi, Shuhui; Chaturvedi, Apoorva; Huang, Haoxin; Yang, Peng; Yao, Yao; Li, Siyuan; Xia, Yunpeng; Zhang, Zhuomin; Wang, Wei; Wang, Huide; Wang, Shaocong; Yuan, Zhen; Yang, Zhengbao; He, Qiyuan; Tai, Huiling; Teo, Edwin Hang Tong; Yu, Hongyu; Ho, Johnny C; Wang, Zhongrui; Zhang, Hua; Tan, Chaoliang.
Afiliação
  • Zha J; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Shi S; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Chaturvedi A; Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Huang H; School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China.
  • Yang P; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore.
  • Yao Y; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Li S; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Xia Y; Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Zhang Z; Department of Chemistry, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Wang W; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Wang H; Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Wang S; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Yuan Z; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Yang Z; Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong, 999077, P. R. China.
  • He Q; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China.
  • Tai H; Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Teo EHT; Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong, 999077, P. R. China.
  • Yu H; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China.
  • Ho JC; State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China.
  • Wang Z; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore.
  • Zhang H; School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Tan C; School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China.
Adv Mater ; 35(20): e2211598, 2023 May.
Article em En | MEDLINE | ID: mdl-36857506
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article