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Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors.
Liang, Lingyan; Zhang, Hengbo; Li, Ting; Li, Wanfa; Gao, Junhua; Zhang, Hongliang; Guo, Min; Gao, Shangpeng; He, Zirui; Liu, Fengjuan; Ning, Ce; Cao, Hongtao; Yuan, Guangcai; Liu, Chuan.
Afiliação
  • Liang L; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Zhang H; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Li T; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Li W; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Gao J; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Zhang H; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Guo M; State Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
  • Gao S; Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
  • He Z; Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
  • Liu F; Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.
  • Ning C; BOE Technology Group Co. Ltd., Beijing, 100176, P. R. China.
  • Cao H; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
  • Yuan G; BOE Technology Group Co. Ltd., Beijing, 100176, P. R. China.
  • Liu C; State Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China.
Adv Sci (Weinh) ; 10(14): e2300373, 2023 May.
Article em En | MEDLINE | ID: mdl-36935362
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article