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Ultra-thin gate insulator of atomic-layer-deposited AlOxand HfOxfor amorphous InGaZnO thin-film transistors.
Li, Jiye; Guan, Yuhang; Li, Jinxiong; Zhang, Yuqing; Zhang, Yuhan; Chan, ManSun; Wang, Xinwei; Lu, Lei; Zhang, Shengdong.
Afiliação
  • Li J; School of Electronic and Computer Engineering, Peking University, Shenzhen, People's Republic of China.
  • Guan Y; School of Electronic and Computer Engineering, Peking University, Shenzhen, People's Republic of China.
  • Li J; School of Advanced Materials, Peking University, Shenzhen, People's Republic of China.
  • Zhang Y; Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China.
  • Zhang Y; School of Electronic and Computer Engineering, Peking University, Shenzhen, People's Republic of China.
  • Chan M; Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, People's Republic of China.
  • Wang X; School of Advanced Materials, Peking University, Shenzhen, People's Republic of China.
  • Lu L; School of Electronic and Computer Engineering, Peking University, Shenzhen, People's Republic of China.
  • Zhang S; School of Electronic and Computer Engineering, Peking University, Shenzhen, People's Republic of China.
Nanotechnology ; 34(26)2023 Apr 12.
Article em En | MEDLINE | ID: mdl-36962937
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article