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Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs.
Liu, Rui; Gao, Linchun; Wang, Juanjuan; Ni, Tao; Li, Yifan; Wang, Runjian; Li, Duoli; Bu, Jianhui; Zeng, Chuanbin; Li, Bo; Luo, Jiajun.
Afiliação
  • Liu R; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Gao L; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Wang J; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China.
  • Ni T; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li Y; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China.
  • Wang R; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Li D; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China.
  • Bu J; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Zeng C; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China.
  • Li B; Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
  • Luo J; University of Chinese Academy of Sciences, Beijing 100049, China.
Micromachines (Basel) ; 14(3)2023 Mar 04.
Article em En | MEDLINE | ID: mdl-36985009
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article