Attack Resilient True Random Number Generators Using Ferroelectric-Enhanced Stochasticity in 2D Transistor.

Chien, Yu-Chieh; Xiang, Heng; Wang, Jianze; Shi, Yufei; Fong, Xuanyao; Ang, Kah-Wee

Chien, Yu-Chieh; Xiang, Heng; Wang, Jianze; Shi, Yufei; Fong, Xuanyao; Ang, Kah-Wee.

Afiliação

Chien YC; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Xiang H; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Wang J; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Shi Y; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Fong X; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.

Small ; 19(38): e2302842, 2023 Sep.

Article em En | MEDLINE | ID: mdl-37194958

Palavras-chave

2D transistors; ferroelectric; true random number generators

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials / Prognostic_studies Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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