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Hydrogen iodide (HI) neutral beam etching characteristics of InGaN and GaN for micro-LED fabrication.
Ohori, Daisuke; Ishihara, Takahiro; Wang, Xuelun; Endo, Kazuhiko; Hsieh, Tsau-Hua; Li, Yiming; Natori, Nobuhiro; Matsui, Kazuma; Samukawa, Seiji.
Afiliação
  • Ohori D; Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
  • Ishihara T; Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
  • Wang X; GaN Advanced Device Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan.
  • Endo K; Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan.
  • Hsieh TH; Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
  • Li Y; Institute of Communications Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
  • Natori N; Institute of Communications Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
  • Matsui K; Department of Electronics and Electrical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
  • Samukawa S; Center for mmWave Smart Radar System and Technologies, National Chiao Tung University, Hsinchu 300, Taiwan.
Nanotechnology ; 34(36)2023 Jun 23.
Article em En | MEDLINE | ID: mdl-37224798
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Compostos de Iodo / Iodetos Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Compostos de Iodo / Iodetos Idioma: En Ano de publicação: 2023 Tipo de documento: Article