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Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate.
Han, Zhanfei; Li, Xiangdong; Wang, Hongyue; Yuan, Jiahui; Wang, Junbo; Wang, Meng; Yang, Weitao; You, Shuzhen; Chang, Jingjing; Zhang, Jincheng; Hao, Yue.
Afiliação
  • Han Z; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • Li X; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • Wang H; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
  • Yuan J; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • Wang J; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
  • Wang M; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • Yang W; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • You S; China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China.
  • Chang J; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • Zhang J; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
  • Hao Y; Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
Micromachines (Basel) ; 14(5)2023 Apr 26.
Article em En | MEDLINE | ID: mdl-37241564
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article