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Understanding and Mitigating the Degradation of Perovskite Solar Cells Based on a Nickel Oxide Hole Transport Material during Damp Heat Testing.
Dussouillez, Marion; Moon, Soo-Jin; Mensi, Mounir; Wolff, Christian M; Liu, Yongpeng; Yum, Jun-Ho; Kamino, Brett A; Walter, Arnaud; Sahli, Florent; Lauber, Ludovic; Christmann, Gabriel; Sivula, Kevin; Jeangros, Quentin; Ballif, Christophe; Nicolay, Sylvain; Paracchino, Adriana.
Afiliação
  • Dussouillez M; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Moon SJ; Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Photovoltaics and Thin Film Electronics, Institute of Electrical and Micro-Engineering (IEM), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland.
  • Mensi M; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Wolff CM; X-Ray Diffraction and Surface Analytics Platform, Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de l'Industrie 17, 1951 Sion, Switzerland.
  • Liu Y; Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Photovoltaics and Thin Film Electronics, Institute of Electrical and Micro-Engineering (IEM), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland.
  • Yum JH; Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 6, 1015 Lausanne, Switzerland.
  • Kamino BA; Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 6, 1015 Lausanne, Switzerland.
  • Walter A; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Sahli F; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Lauber L; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Christmann G; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Sivula K; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Jeangros Q; Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 6, 1015 Lausanne, Switzerland.
  • Ballif C; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Nicolay S; CSEM PV-Center, Jaquet-Droz 1, 2002 Neuchâtel, Switzerland.
  • Paracchino A; Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Photovoltaics and Thin Film Electronics, Institute of Electrical and Micro-Engineering (IEM), Rue de la Maladière 71b, 2000 Neuchâtel, Switzerland.
ACS Appl Mater Interfaces ; 15(23): 27941-27951, 2023 Jun 14.
Article em En | MEDLINE | ID: mdl-37255346
ABSTRACT
The development of stable materials, processable on a large area, is a prerequisite for perovskite industrialization. Beyond the perovskite absorber itself, this should also guide the development of all other layers in the solar cell. In this regard, the use of NiOx as a hole transport material (HTM) offers several advantages, as it can be deposited with high throughput on large areas and on flat or textured surfaces via sputtering, a well-established industrial method. However, NiOx may trigger the degradation of perovskite solar cells (PSCs) when exposed to environmental stressors. Already after 100 h of damp heat stressing, a strong fill factor (FF) loss appears in conjunction with a characteristic S-shaped J-V curve. By performing a wide range of analysis on cells and materials, completed by device simulation, the cause of the degradation is pinpointed and mitigation strategies are proposed. When NiOx is heated in an air-tight environment, its free charge carrier density drops, resulting in a band misalignment at the NiOx/perovskite interface and in the formation of a barrier impeding hole extraction. Adding an organic layer between the NiOx and the perovskite enables higher performances but not long-term thermal stability, for which reducing the NiOx thickness is necessary.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article