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Quantum anomalous Hall effect with a high and tunable Chern number in monolayer NdN2.
Li, Shengshi; Li, Xinyang; Ji, Weixiao; Li, Ping; Yan, Shishen; Zhang, Changwen.
Afiliação
  • Li S; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
  • Li X; School of Physics, Southeast University, Nanjing, Jiangsu, 211100, People's Republic of China.
  • Ji W; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
  • Li P; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
  • Yan S; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
  • Zhang C; Spintronics Institute & School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China. hellojiweixiao@163.com.
Phys Chem Chem Phys ; 25(27): 18275-18283, 2023 Jul 12.
Article em En | MEDLINE | ID: mdl-37395308
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2023 Tipo de documento: Article