Your browser doesn't support javascript.
loading
Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures.
Liang, Zihan; Zhou, Xin; Zhang, Le; Yu, Xiang-Long; Lv, Yan; Song, Xuefen; Zhou, Yongheng; Wang, Han; Wang, Shuo; Wang, Taihong; Shum, Perry Ping; He, Qian; Liu, Yanjun; Zhu, Chao; Wang, Lin; Chen, Xiaolong.
Afiliação
  • Liang Z; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • Zhou X; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
  • Zhang L; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • Yu XL; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China. yuxl@sustech.edu.cn.
  • Lv Y; International Quantum Academy, Shenzhen, China. yuxl@sustech.edu.cn.
  • Song X; School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
  • Zhou Y; School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
  • Wang H; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • Wang S; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • Wang T; School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
  • Shum PP; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • He Q; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • Liu Y; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
  • Zhu C; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
  • Wang L; SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China.
  • Chen X; School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China. iamlwang@njtech.edu.c
Nat Commun ; 14(1): 4230, 2023 Jul 15.
Article em En | MEDLINE | ID: mdl-37454221
ABSTRACT
Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article