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Electrostatic gating dependent multiple band alignments in ferroelectric VS2/Ga2O3 van der Waals heterostructures.
Zhu, Yunlai; Qu, Zihan; Wang, Xiaoteng; Zhang, Jishun; Wu, Zuheng; Xu, Zuyu; Yang, Fei; Wang, Jun; Dai, Yuehua.
Afiliação
  • Zhu Y; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Qu Z; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Wang X; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Zhang J; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Wu Z; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Xu Z; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Yang F; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Wang J; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
  • Dai Y; School of Integrated Circuits, Anhui University, Hefei, Anhui, 230601, China. daiyuehua2013@163.com.
Phys Chem Chem Phys ; 25(34): 22711-22718, 2023 Aug 30.
Article em En | MEDLINE | ID: mdl-37606252

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article