Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs.

Tyaginov, Stanislav; O'Sullivan, Barry; Chasin, Adrian; Rawal, Yaksh; Chiarella, Thomas; de Carvalho Cavalcante, Camila Toledo; Kimura, Yosuke; Vandemaele, Michiel; Ritzenthaler, Romain; Mitard, Jerome; Palayam, Senthil Vadakupudhu; Reifsnider, Jason; Kaczer, Ben

Tyaginov, Stanislav; O'Sullivan, Barry; Chasin, Adrian; Rawal, Yaksh; Chiarella, Thomas; de Carvalho Cavalcante, Camila Toledo; Kimura, Yosuke; Vandemaele, Michiel; Ritzenthaler, Romain; Mitard, Jerome; Palayam, Senthil Vadakupudhu; Reifsnider, Jason; Kaczer, Ben.

Afiliação

Tyaginov S; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
O'Sullivan B; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Chasin A; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Rawal Y; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Chiarella T; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
de Carvalho Cavalcante CT; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Kimura Y; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Vandemaele M; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Ritzenthaler R; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Mitard J; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Palayam SV; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Reifsnider J; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Kaczer B; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.

Micromachines (Basel) ; 14(8)2023 Jul 28.

Article em En | MEDLINE | ID: mdl-37630050

Palavras-chave

SiO2; SiON; bias temperature instability; defects; hard breakdown; nitridation; nitrided oxide; nitrogen content; ramped voltages stress; transistor lifetime

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article