Regulating Oxygen Vacancies and Fermi Level of Mesoporous CeO2-x for Intensified Built-In Electric Field and Boosted Charge Separation of Cs3 Bi2 Br9 /CeO2-x S-Scheme Heterojunction.

Zhang, Zhijie; Wang, Xuesheng; Li, Deben; Chu, Yaoqing; Xu, Jiayue

Regulating Oxygen Vacancies and Fermi Level of Mesoporous CeO_2-x for Intensified Built-In Electric Field and Boosted Charge Separation of Cs₃ Bi₂ Br₉ /CeO_2-x S-Scheme Heterojunction.

Zhang, Zhijie; Wang, Xuesheng; Li, Deben; Chu, Yaoqing; Xu, Jiayue.

Afiliação

Zhang Z; School of Materials Science and Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai, 201418, P. R. China.
Wang X; School of Materials Science and Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai, 201418, P. R. China.
Li D; School of Materials Science and Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai, 201418, P. R. China.
Chu Y; School of Materials Science and Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai, 201418, P. R. China.
Xu J; School of Materials Science and Engineering, Shanghai Institute of Technology, 100 Haiquan Road, Shanghai, 201418, P. R. China.

Small ; 20(2): e2305566, 2024 Jan.

Article em En | MEDLINE | ID: mdl-37661354

Palavras-chave

Cs3Bi2Br9; S-scheme heterojunction; built-in electric field; mesoporous CeO2; oxygen vacancy

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article