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Photoelectric performance of InSe vdW semi-floating gate p-n junction transistor.
Wang, Jinghui; Wang, Yipeng; Feng, Guojin; Zeng, Zhongming; Ma, Tieying.
Afiliação
  • Wang J; Division of Thermophysics Metrology, National Institute of Metrology, Beijing 100029, People's Republic of China.
  • Wang Y; College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310013, People's Republic of China.
  • Feng G; Division of Optical Metrology, National Institute of Metrology, Beijing 100029, People's Republic of China.
  • Zeng Z; Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, People's Republic of China.
  • Ma T; College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310013, People's Republic of China.
Nanotechnology ; 34(50)2023 Oct 04.
Article em En | MEDLINE | ID: mdl-37683623
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article