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Sol-Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks.
Lee, Taehun; Kim, Hae-In; Cho, Yoonjin; Lee, Sangwoo; Lee, Won-Yong; Bae, Jin-Hyuk; Kang, In-Man; Kim, Kwangeun; Lee, Sin-Hyung; Jang, Jaewon.
Afiliação
  • Lee T; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Kim HI; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Cho Y; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Lee S; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Lee WY; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Bae JH; The Institute of Electronic Technology, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Kang IM; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Kim K; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
  • Lee SH; School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea.
  • Jang J; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Nanomaterials (Basel) ; 13(17)2023 Aug 27.
Article em En | MEDLINE | ID: mdl-37686940
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Ano de publicação: 2023 Tipo de documento: Article