Large lateral photovoltaic effect with ultrafast optical relaxation time in SnS2/n-Si junctions.
Appl Opt
; 62(24): 6528-6533, 2023 Aug 20.
Article
em En
| MEDLINE
| ID: mdl-37706847
ABSTRACT
A large lateral photovoltaic effect (LPE) with a fast optical response time is necessary to develop high-performance position-sensitive detectors. In this paper, we report an LPE with a high self-powered position sensitivity and ultrafast optical relaxation time in S n S 2/n-S i junctions prepared using pulsed laser deposition. A large built-in electric field was generated at the S n S 2/S i interface, which resulted in a large LPE with a positional sensitivity of up to 116 mV/mm. Furthermore, the measurement circuit with multiple parallel resistors had a strong influence on the ultrafast optical response time of the LPE and the fastest optical relaxation time observed was â¼0.44µs. Our results suggest that the S n S 2/S i junction would be a promising candidate for a wide range of optoelectronic device applications.
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MEDLINE
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En
Ano de publicação:
2023
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Article