Solving the issue of increasing forming voltage during device miniaturization in hafnium oxide-based resistive access memory using high-<i>k</i>sidewall material.

Yang, Fei; He, Zijian; Liu, Bingkun; Hu, Bo; Lou, Shilong; Li, Duogui; Wang, Wentao

Solving the issue of increasing forming voltage during device miniaturization in hafnium oxide-based resistive access memory using high-ksidewall material.

Yang, Fei; He, Zijian; Liu, Bingkun; Hu, Bo; Lou, Shilong; Li, Duogui; Wang, Wentao.

Afiliação

Yang F; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
He Z; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
Liu B; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
Hu B; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
Lou S; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
Li D; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.
Wang W; School of Integrated Circuits, Anhui University, Hefei 230601, People's Republic of China.

Nanotechnology ; 34(50)2023 Oct 11.

Article em En | MEDLINE | ID: mdl-37722365

Palavras-chave

forming; high-k; oxygen vacancy; resistive random access memory

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2023 Tipo de documento: Article