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Two-Dimensional Silver-Chalcogenolate-Based Cluster-Assembled Material: A p-type Semiconductor.
Das, Anish Kumar; Biswas, Sourav; Kayal, Arijit; Reber, Arthur C; Bhandary, Subhrajyoti; Chopra, Deepak; Mitra, Joy; Khanna, Shiv N; Mandal, Sukhendu.
Afiliação
  • Das AK; School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India.
  • Biswas S; School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India.
  • Kayal A; School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India.
  • Reber AC; Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23220, United States.
  • Bhandary S; School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India.
  • Chopra D; Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Madhya Pradesh 462066, India.
  • Mitra J; School of Physics, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India.
  • Khanna SN; Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23220, United States.
  • Mandal S; School of Chemistry, Indian Institute of Science Education and Research Thiruvananthapuram, Thiruvananthapuram, Kerala 695551, India.
Nano Lett ; 23(19): 8923-8931, 2023 Oct 11.
Article em En | MEDLINE | ID: mdl-37725097
We have synthesized and characterized a new two-dimensional honeycomb architecture resembling a single-layer of atomically precise silver cluster-assembled material (CAM), [Ag12(StBu)6(CF3COO)6(4,4'-azopyridine)3] (Ag12-azo-bpy). The interlayer noncovalent van der Waals interactions within the single-crystals were successfully disrupted, leading to the creation of this unique structure. The optimized Ag12-azo-bpy CAM demonstrates a valence band that is localized on the Ag12 cluster node situated near the Fermi energy level. This localization induces electron injection from the linker to the cluster node, facilitating efficient charge transportation along the plane. Exploiting this single-layer structure as a distinctive platform for p-type channel material, it was employed in a field-effect transistor configuration. Remarkably, the transistor exhibits a high hole mobility of 1.215 cm2 V-1 s-1 and an impressive ON/OFF current ratio of ∼4500 at room-temperature.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article