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Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor.
Fu, Qundong; Cong, Xin; Xu, Xiaodong; Zhu, Song; Zhao, Xiaoxu; Liu, Sheng; Yao, Bingqing; Xu, Manzhang; Deng, Ya; Zhu, Chao; Wang, Xiaowei; Kang, Lixing; Zeng, Qingsheng; Lin, Miao-Ling; Wang, Xingli; Tang, Bijun; Yang, Jianqun; Dong, Zhili; Liu, Fucai; Xiong, Qihua; Zhou, Jiadong; Wang, Qijie; Li, Xingji; Tan, Ping-Heng; Tay, Beng Kang; Liu, Zheng.
Afiliação
  • Fu Q; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Cong X; IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore.
  • Xu X; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
  • Zhu S; School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China.
  • Zhao X; School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Liu S; School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China.
  • Yao B; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
  • Xu M; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Deng Y; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Zhu C; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Wang X; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Kang L; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Zeng Q; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Lin ML; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Wang X; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China.
  • Tang B; IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore.
  • Yang J; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Dong Z; School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China.
  • Liu F; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Xiong Q; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
  • Zhou J; State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, P. R. China.
  • Wang Q; Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China.
  • Li X; Key Lab of advanced optoelectronic quantum architecture and measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China.
  • Tan PH; IRL 3288 CINTRA (CNRS-NTU-THALES Research Alliances), Nanyang Technological University, Singapore, 637553, Singapore.
  • Tay BK; School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
  • Liu Z; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
Adv Mater ; 35(46): e2306330, 2023 Nov.
Article em En | MEDLINE | ID: mdl-37737448
ABSTRACT
Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2) ), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article