Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing.

Hwang, Sungmin; Yu, Junsu; Song, Min Suk; Hwang, Hwiho; Kim, Hyungjin

Hwang, Sungmin; Yu, Junsu; Song, Min Suk; Hwang, Hwiho; Kim, Hyungjin.

Afiliação

Hwang S; Department of AI Semiconductor Engineering, Korea University, Sejong, 30019, South Korea.
Yu J; Department of Electrical and Computer Engineering, Seoul National University, Seoul, 08826, South Korea.
Song MS; Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea.
Hwang H; Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea.
Kim H; Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea.

Adv Sci (Weinh) ; 10(32): e2303817, 2023 Nov.

Article em En | MEDLINE | ID: mdl-37752771

Palavras-chave

NAND flash structure; charge trap flash; crossbar array; memcapacitor; neuromorphic computing; spiking neural network

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article