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Correction: Self-limiting stoichiometry in SnSe thin films.
Chin, Jonathan R; Frye, Marshall B; Liu, Derrick Shao-Heng; Hilse, Maria; Graham, Ian C; Shallenberger, Jeffrey; Wang, Ke; Engel-Herbert, Roman; Wang, Mengyi; Shin, Yun Kyung; Nayir, Nadire; van Duin, Adri C T; Garten, Lauren M.
Afiliação
  • Chin JR; The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA. lauren.garten@mse.gatech.edu.
  • Frye MB; The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA. lauren.garten@mse.gatech.edu.
  • Liu DS; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • Hilse M; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • Graham IC; The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA. lauren.garten@mse.gatech.edu.
  • Shallenberger J; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • Wang K; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • Engel-Herbert R; Paul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany.
  • Wang M; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • Shin YK; Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • Nayir N; Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
  • van Duin ACT; Physics Department, Karamanoglu Mehmetbey University, Karaman, 70000, Turkey.
  • Garten LM; Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
Nanoscale ; 15(42): 17216, 2023 Nov 02.
Article em En | MEDLINE | ID: mdl-37877894
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article