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Self-Aligned Top-Gate Structure in High-Performance 2D p-FETs via van der Waals Integration and Contact Spacer Doping.
Ngo, Tien Dat; Huynh, Tuyen; Moon, Inyong; Taniguchi, Takashi; Watanabe, Kenji; Choi, Min Sup; Yoo, Won Jong.
Afiliação
  • Ngo TD; SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.
  • Huynh T; SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.
  • Moon I; Quantum Information Research Support Center, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.
  • Taniguchi T; International Centrer for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki 305-0044, Japan.
  • Watanabe K; Research Center for Functional Materials, National Institute for Materials Science, Ibaraki 305-0044, Japan.
  • Choi MS; Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.
  • Yoo WJ; SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.
Nano Lett ; 23(23): 11345-11352, 2023 Dec 13.
Article em En | MEDLINE | ID: mdl-37983163
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article