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Investigation of the structural, surface topographical, fractal, capacitive, and electrical properties of a defect brownmillerite perovskite material KBiFeMnO5 for electronic devices.
Panda, Debasish; Hota, Sudhansu Sekhar; Choudhary, Ram Naresh Prasad.
Afiliação
  • Panda D; Department of Physics, SOA (DU) Bhubaneswar-751030 India sudhansusekhar405@gmail.com.
  • Hota SS; Department of Physics, SOA (DU) Bhubaneswar-751030 India sudhansusekhar405@gmail.com.
  • Choudhary RNP; Department of Physics, SOA (DU) Bhubaneswar-751030 India sudhansusekhar405@gmail.com.
RSC Adv ; 14(5): 3400-3412, 2024 Jan 17.
Article em En | MEDLINE | ID: mdl-38259990
ABSTRACT
This article reports the development and characterizations (structural, surface topographical, fractal, dielectric, transport, impedance, resistive, and current-voltage properties) of a defect brownmillerite material KBiFeMnO5. Preliminary investigation of the X-ray diffraction (XRD) pattern with the Monte Carlo technique with McMaille 4.0 shows monoclinic symmetry having lattice parameters a = 8.261 Å, b = 8.251 Å, c = 7.524 Å, and ß = 108.58°. The analysis of the Williamson-Hall plot illustrates the average crystallite size and micro-lattice strain are 124.6 nm and 0.002, respectively. The scanning electron microscopic image examines the microstructural surface topography, fractal analysis, and surface roughness (using the standard of ISO25178) of the material. Maxwell-Wagner dielectric dispersion, relaxation, and transport mechanisms are investigated utilizing dielectric, impedance, and conductivity spectra accumulated within the experimental frequency (1 kHz to 1 MHz) and temperature (25-500 °C) ranges. The energy band of an intrinsic region with a 1 MHz frequency indicates the semiconducting behavior of the material. The logarithmic current density and electric field are used to investigate the presence of ohmic and space charge limited conduction (SCLC) mechanisms. The thermistor constant (ß) is determined to be 4633.86, and the temperature coefficient of resistance (TCR) is -0.00322, which may be suitable for high-temperature NTC thermistors and other related device applications.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article