Interfacial engineering eliminates energy loss at perovskite/HTL junction.
Chem Commun (Camb)
; 60(21): 2938-2941, 2024 Mar 07.
Article
em En
| MEDLINE
| ID: mdl-38372697
ABSTRACT
Realizing efficient FAPbI3-based devices with high open-circuit voltage (VOC) is still challenging, due to severe energy loss between the n-type perovskite and p-type hole-transporting layer (HTL). Here, we developed a strategy involving controlling the formation of iodine vacancies in order to induce formation of p-type perovskite and hence mitigate such energy loss. Post-deposition of n-butylamine iodide was discovered to induce an n-to-p-type transition in the FAPbI3 perovskite and hence form the p-type perovskite/p-type HTL junction. The resultant device realized a VOC of as high as 1.12 V, a value â¼14.3% higher than that of the corresponding n-type FAPbI3 device (0.98 V).
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2024
Tipo de documento:
Article