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Monolayer V_{2}MX_{4}: A New Family of Quantum Anomalous Hall Insulators.
Jiang, Yadong; Wang, Huan; Bao, Kejie; Liu, Zhaochen; Wang, Jing.
Afiliação
  • Jiang Y; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Wang H; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Bao K; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Liu Z; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Wang J; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
Phys Rev Lett ; 132(10): 106602, 2024 Mar 08.
Article em En | MEDLINE | ID: mdl-38518306
ABSTRACT
We theoretically propose that the van der Waals layered ternary transition metal chalcogenide V_{2}MX_{4} (M=W, Mo; X=S, Se) is a new family of quantum anomalous Hall insulators with sizable bulk gap and Chern number C=-1. The large topological gap originates from the deep band inversion between spin-up bands contributed by d_{xz}, d_{yz} orbitals of V and spin-down band from d_{z^{2}} orbital of M at the Fermi level. Remarkably, the Curie temperature of monolayer V_{2}MX_{4} is predicted to be much higher than that of monolayer MnBi_{2}Te_{4}. Furthermore, the thickness dependence of the Chern number for few multilayers shows interesting oscillating behavior. The general physics from the d orbitals here applies to a large class of ternary transition metal chalcogenide such as Ti_{2}WX_{4} with the space group P-42m. These interesting predictions, if realized experimentally, could greatly promote the research and application of topological quantum physics.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article