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Stretchable, Transparent, and Ultra-Broadband Terahertz Shielding Thin Films Based on Wrinkled MXene Architectures.
Yang, Shaodian; Lin, Zhiqiang; Wang, Ximiao; Huang, Junhua; Yang, Rongliang; Chen, Zibo; Jia, Yi; Zeng, Zhiping; Cao, Zhaolong; Zhu, Hongjia; Hu, Yougen; Li, Enen; Chen, Huanjun; Wang, Tianwu; Deng, Shaozhi; Gui, Xuchun.
Afiliação
  • Yang S; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Lin Z; National Key Laboratory of Materials for Integrated Circuits, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China.
  • Wang X; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Huang J; Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China.
  • Yang R; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Chen Z; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Jia Y; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Zeng Z; China Academy of Aerospace Science and Innovation, Beijing, 100176, People's Republic of China.
  • Cao Z; School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Zhu H; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Hu Y; Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China.
  • Li E; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, People's Republic of China.
  • Chen H; Guangdong Province Key Laboratory of Display Material and Technology, Guangzhou, 510275, People's Republic of China.
  • Wang T; National Key Laboratory of Materials for Integrated Circuits, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, People's Republic of China.
  • Deng S; GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou, 510700, People's Republic of China.
  • Gui X; School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
Nanomicro Lett ; 16(1): 165, 2024 Apr 02.
Article em En | MEDLINE | ID: mdl-38564038
ABSTRACT
With the increasing demand for terahertz (THz) technology in security inspection, medical imaging, and flexible electronics, there is a significant need for stretchable and transparent THz electromagnetic interference (EMI) shielding materials. Existing EMI shielding materials, like opaque metals and carbon-based films, face challenges in achieving both high transparency and high shielding efficiency (SE). Here, a wrinkled structure strategy was proposed to construct ultra-thin, stretchable, and transparent terahertz shielding MXene films, which possesses both isotropous wrinkles (height about 50 nm) and periodic wrinkles (height about 500 nm). Compared to flat film, the wrinkled MXene film (8 nm) demonstrates a remarkable 36.5% increase in SE within the THz band. The wrinkled MXene film exhibits an EMI SE of 21.1 dB at the thickness of 100 nm, and an average EMI SE/t of 700 dB µm-1 over the 0.1-10 THz. Theoretical calculations suggest that the wrinkled structure enhances the film's conductivity and surface plasmon resonances, resulting in an improved THz wave absorption. Additionally, the wrinkled structure enhances the MXene films' stretchability and stability. After bending and stretching (at 30% strain) cycles, the average THz transmittance of the wrinkled film is only 0.5% and 2.4%, respectively. The outstanding performances of the wrinkled MXene film make it a promising THz electromagnetic shielding materials for future smart windows and wearable electronics.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article