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Orientation and morphology control in acid-catalyzed covalent organic framework thin films.
Bhagwandin, Dayanni D; Page, Kirt A; Tran, Ly D; Yao, Yao; Reidell, Alexander; Muratore, Christopher; Fang, Qiyi; Ruditskiy, Aleksey; Hampton, Cheri M; Kennedy, W Joshua; Drummy, Lawrence F; Zhong, Yu; Marks, Tobin J; Facchetti, Antonio; Lou, Jun; Koerner, Hilmar; Baldwin, Luke A; Glavin, Nicholas R.
Afiliação
  • Bhagwandin DD; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
  • Page KA; UES, Inc., Beavercreek, Ohio 45432, USA.
  • Tran LD; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
  • Yao Y; UES, Inc., Beavercreek, Ohio 45432, USA.
  • Reidell A; Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA.
  • Muratore C; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
  • Fang Q; UES, Inc., Beavercreek, Ohio 45432, USA.
  • Ruditskiy A; Department of Chemistry and the Materials Research Center, Northwestern University, Sheridan Road, Evanston, IL 60208, USA.
  • Hampton CM; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
  • Kennedy WJ; UES, Inc., Beavercreek, Ohio 45432, USA.
  • Drummy LF; Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469, USA.
  • Zhong Y; Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA.
  • Marks TJ; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.
  • Facchetti A; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
  • Lou J; UES, Inc., Beavercreek, Ohio 45432, USA.
  • Koerner H; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
  • Baldwin LA; UES, Inc., Beavercreek, Ohio 45432, USA.
  • Glavin NR; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA. Nicholas.Glavin.1@us.af.mil.
Nanoscale ; 16(17): 8369-8377, 2024 May 02.
Article em En | MEDLINE | ID: mdl-38572999
ABSTRACT
As thin films of semiconducting covalent organic frameworks (COFs) are demonstrating utility for ambipolar electronics, channel materials in organic electrochemical transistors (OECTs), and broadband photodetectors, control and modulation of their thin film properties is paramount. In this work, an interfacial growth technique is utilized to synthesize imine TAPB-PDA COF films at both the liquid-liquid interface as well as at the liquid-solid interface on a Si/SiO2 substrate. The concentration of acetic acid catalyst in the aqueous phase is shown to significantly influence the thin film morphology of the liquid-solid growth, with concentrations below 1 M resulting in no film nucleation, concentrations of 1-4 M enabling smooth film formation, and concentrations greater than 4 M resulting in films with a higher density of particulates on the surface. Importantly, while the films grown at the liquid-liquid interface are mixed-orientation, those grown directly at the liquid-solid interface on the Si/SiO2 surface have highly oriented COF layers aligned parallel to the substrate surface. Moreover, this liquid-solid growth process affords TAPB-PDA COF thin films with p-type charge transport having a transconductance of 10 µS at a gate voltage of -0.9 V in an OECT device structure.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article