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High Carrier Mobility and Promising Thermoelectric Module Performance of N-Type PbSe Crystals.
Wang, Siqi; Wen, Yi; Zhu, Yingcai; Wang, Ziyuan; Liu, Dongrui; Zheng, Junqing; Zhan, Shaoping; Xie, Hongyao; Ge, Zhenhua; Gao, Xiang; Cao, Qian; Chang, Cheng; Zhao, Li-Dong.
Afiliação
  • Wang S; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Wen Y; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Zhu Y; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Wang Z; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China.
  • Liu D; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Zheng J; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Zhan S; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Xie H; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Ge Z; Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming, 650093, China.
  • Gao X; Center for High Pressure Science and Technology Advanced Research (HPSTAR), Beijing, 100094, China.
  • Cao Q; Huabei Cooling Device Co. Ltd., Hebei, 065400, China.
  • Chang C; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
  • Zhao LD; School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
Small ; : e2400866, 2024 Apr 19.
Article em En | MEDLINE | ID: mdl-38639306
ABSTRACT
The scarcity of Te hampers the widespread use of Bi2Te3-based thermoelectric modules. Here, the thermoelectric module potential of PbSe is investigated by improving its carrier mobility. Initially, large PbSe crystals are grown with the temperature gradient method to mitigate grain boundary effects on carrier transport. Subsequently, light doping with <1mole‰ halogens (Cl/Br/I) increases room-temperature carrier mobility to ~1600 cm2 V-1 s-1, achieved by reducing carrier concentration compared to traditional heavy doping. Crystal growth design and light doping enhance carrier mobility without affecting effective mass, resulting in a high power factor ~40 µW cm-1 K-2 in PbSe-Cl/Br/I crystals at 300 K. Additionally, Cl/Br/I doping reduces thermal conductivity and bipolar diffusion, leading to significantly lower thermal conductivity at high temperature. Enhanced carrier mobility and suppressed bipolar effect boost ZT values across the entire temperature range in n-type PbSe-Cl/Br/I crystals. Specifically, ZT values of PbSe-Br crystal reach ~0.6 at 300 K, ~1.2 at 773 K, and the average ZT (ZTave) reaches ~1.0 at 300-773 K. Ultimately, ~5.8% power generation efficiency in a PbSe single leg with a maximum temperature cooling difference of 40 K with 7-pair modules is achieved. These results indicate the potential for cost-effective and high-performance thermoelectric cooling modules based on PbSe.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article