Deep-ultraviolet n-ZnGa2O4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition.
Opt Lett
; 49(9): 2309-2312, 2024 May 01.
Article
em En
| MEDLINE
| ID: mdl-38691706
ABSTRACT
Zinc gallium oxide (ZnGa2O4) has attracted considerable interest in deep-ultraviolet photodetectors, due to the ultrawide bandgap, high transmittance in the ultraviolet (UV) region, and excellent environmental stability. In this study, ZnGa2O4 thin films were deposited on p-GaN epi-layers using pulsed laser deposition, resulting in improved crystalline quality. The ZnGa2O4 film exhibited a bandgap of 4.93â
eV, calculated through absorption spectra. A heterojunction photodetector (PD) was constructed, demonstrating a rectification effect, an on/off ratio of 12,697 at -5.87â
V, a peak responsivity of 14.5â
mA/W, and a peak detectivity of 1.14 × 1012 Jones (262â
nm, -6â
V). The PD exhibited a fast response time (39â
ms) and recovery time (30â
ms) under 262â
nm illumination. The band diagram based on the Anderson model elucidates the photoresponse and carrier transport mechanism. This work paves the way for advancing next-generation optoelectronics.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2024
Tipo de documento:
Article