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Ion detection in a DNA nanopore FET device.
Livernois, William; Cao, Purunc Simon; Saha, Soumyadeep; Ding, Quanchen; Gopinath, Ashwin; Anantram, M P.
Afiliação
  • Livernois W; Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, United States of America.
  • Cao PS; Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, United States of America.
  • Saha S; Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, CA, Canada.
  • Ding Q; Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, United States of America.
  • Gopinath A; Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, United States of America.
  • Anantram MP; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, United States of America.
Nanotechnology ; 35(32)2024 May 20.
Article em En | MEDLINE | ID: mdl-38692268
ABSTRACT
An ion detection device that combines a DNA-origami nanopore and a field-effect transistor (FET) was designed and modeled to determine sensitivity of the nanodevice to the local cellular environment. Such devices could be integrated into a live cell, creating an abiotic-biotic interface integrated with semiconductor electronics. A continuum model is used to describe the behavior of ions in an electrolyte solution. The drift-diffusion equations are employed to model the ion distribution, taking into account the electric fields and concentration gradients. This was matched to the results from electric double layer theory to verify applicability of the model to a bio-sensing environment. The FET device combined with the nanopore is shown to have high sensitivity to ion concentration and nanopore geometry, with the electrical double layer behavior governing the device characteristics. A logarithmic relationship was found between ion concentration and a single FET current, generating up to 200 nA of current difference with a small applied bias.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / DNA / Nanoporos / Íons Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Transistores Eletrônicos / DNA / Nanoporos / Íons Idioma: En Ano de publicação: 2024 Tipo de documento: Article