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Irreversible coherent matching bonding of van der Waals heterostructure lattice by pressure.
Zhen, Jiapeng; Huang, Qiushi; Shen, Kai; Dong, Hongliang; Zhang, Shihui; Lv, Kehong; Yang, Peng; Zhang, Yong; Guo, Silin; Qiu, Jing; Liu, Guanjun.
Afiliação
  • Zhen J; College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
  • Huang Q; Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
  • Shen K; Beijing Computational Science Research Center, Beijing 100093, People's Republic of China.
  • Dong H; College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
  • Zhang S; Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
  • Lv K; Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, People's Republic of China.
  • Yang P; Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, People's Republic of China.
  • Zhang Y; State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, People's Republic of China.
  • Guo S; College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
  • Qiu J; Science and Technology on Integrated Logistics Support Laboratory, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
  • Liu G; College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China.
Proc Natl Acad Sci U S A ; 121(23): e2403726121, 2024 Jun 04.
Article em En | MEDLINE | ID: mdl-38805293
ABSTRACT
The key of heterostructure is the combinations created by stacking various vdW materials, which can modify interlayer coupling and electronic properties, providing exciting opportunities for designer devices. However, this simple stacking does not create chemical bonds, making it difficult to fundamentally alter the electronic structure. Here, we demonstrate that interlayer interactions in heterostructures can be fundamentally controlled using hydrostatic pressure, providing a bonding method to modify electronic structures. By covering graphene with boron nitride and inducing an irreversible phase transition, the conditions for graphene lattice-matching bonding (IMB) were created. We demonstrate that the increased bandgap of graphene under pressure is well maintained in ambient due to the IMB in the interface. Comparison to theoretical modeling emphasizes the process of pressure-induced interfacial bonding, systematically generalizes, and predicts this model. Our results demonstrate that pressure can irreversibly control interlayer bonding, providing opportunities for high-pressure technology in ambient applications and IMB engineering in heterostructures.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article