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Van der Waals polarity-engineered 3D integration of 2D complementary logic.
Guo, Yimeng; Li, Jiangxu; Zhan, Xuepeng; Wang, Chunwen; Li, Min; Zhang, Biao; Wang, Zirui; Liu, Yueyang; Yang, Kaining; Wang, Hai; Li, Wanying; Gu, Pingfan; Luo, Zhaoping; Liu, Yingjia; Liu, Peitao; Chen, Bo; Watanabe, Kenji; Taniguchi, Takashi; Chen, Xing-Qiu; Qin, Chengbing; Chen, Jiezhi; Sun, Dongming; Zhang, Jing; Wang, Runsheng; Liu, Jianpeng; Ye, Yu; Li, Xiuyan; Hou, Yanglong; Zhou, Wu; Wang, Hanwen; Han, Zheng.
Afiliação
  • Guo Y; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Li J; School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China.
  • Zhan X; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Wang C; School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
  • Li M; School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Zhang B; School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
  • Wang Z; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China.
  • Liu Y; School of Materials, Shenzhen Campus of Sun Yat-Sen University, Shenzhen, China.
  • Yang K; School of Materials Science and Engineering, Beijing Key Laboratory for Magnetoelectric Materials and Devices, Peking University, Beijing, China.
  • Wang H; School of Integrated Circuits, Peking University, Beijing, China.
  • Li W; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences Beijing, Beijing, China.
  • Gu P; State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
  • Luo Z; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
  • Liu Y; School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
  • Liu P; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Chen B; Collaborative Innovation Center of Quantum Matter, Beijing, China.
  • Watanabe K; State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing, China.
  • Taniguchi T; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Chen XQ; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Qin C; School of Materials Science and Engineering, University of Science and Technology of China, Anhui, China.
  • Chen J; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Sun D; School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
  • Zhang J; Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan.
  • Wang R; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan.
  • Liu J; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Ye Y; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
  • Li X; State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan, China.
  • Hou Y; School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
  • Zhou W; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China.
  • Wang H; State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Optoelectronics, Shanxi University, Taiyuan, China.
  • Han Z; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China.
Nature ; 630(8016): 346-352, 2024 Jun.
Article em En | MEDLINE | ID: mdl-38811731
ABSTRACT
Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis1-3. Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures4,5, as well as hetero-2D layers with different carrier types6-8, have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17) and MoS2 (refs. 11,18-28)) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article