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A silicon diode-based optoelectronic interface for bidirectional neural modulation.
Fu, Xin; Hu, Zhengwei; Li, Wenjun; Ma, Liang; Chen, Junyu; Liu, Muyang; Liu, Jie; Hu, Shuhan; Wang, Huachun; Huang, Yunxiang; Tang, Guo; Zhang, Bozhen; Cai, Xue; Wang, Yuqi; Li, Lizhu; Ma, Jian; Shi, Song-Hai; Yin, Lan; Zhang, Hao; Li, Xiaojian; Sheng, Xing.
Afiliação
  • Fu X; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Hu Z; School of Materials Science and Engineering, Key Laboratory of Advanced Materials (Ministry of Education), State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, China.
  • Li W; Shenzhen-Hong Kong Institute of Brain Science-Shenzhen Fundamental Research Institutions, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
  • Ma L; Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China.
  • Chen J; Shenzhen-Hong Kong Institute of Brain Science-Shenzhen Fundamental Research Institutions, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.
  • Liu M; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Liu J; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Hu S; School of Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Wang H; School of Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Huang Y; School of Integrated Circuits, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China.
  • Tang G; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Zhang B; School of Materials Science and Engineering, Key Laboratory of Advanced Materials (Ministry of Education), State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, China.
  • Cai X; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Wang Y; School of Materials Science and Engineering, Key Laboratory of Advanced Materials (Ministry of Education), State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, China.
  • Li L; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Ma J; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Shi SH; Department of Electronic Engineering, Beijing National Research Center for Information Science and Technology, Institute for Precision Medicine, Laboratory of Flexible Electronics Technology, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Yin L; School of Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Zhang H; School of Life Sciences, IDG/McGovern Institute for Brain Research, Tsinghua University, Beijing 100084, China.
  • Li X; School of Materials Science and Engineering, Key Laboratory of Advanced Materials (Ministry of Education), State Key Laboratory of New Ceramics and Fine Processing, Laboratory of Flexible Electronics Technology, Tsinghua University, Beijing 100084, China.
  • Sheng X; Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China.
Proc Natl Acad Sci U S A ; 121(30): e2404164121, 2024 Jul 23.
Article em En | MEDLINE | ID: mdl-39012823
ABSTRACT
The development of advanced neural modulation techniques is crucial to neuroscience research and neuroengineering applications. Recently, optical-based, nongenetic modulation approaches have been actively investigated to remotely interrogate the nervous system with high precision. Here, we show that a thin-film, silicon (Si)-based diode device is capable to bidirectionally regulate in vitro and in vivo neural activities upon adjusted illumination. When exposed to high-power and short-pulsed light, the Si diode generates photothermal effects, evoking neuron depolarization and enhancing intracellular calcium dynamics. Conversely, low-power and long-pulsed light on the Si diode hyperpolarizes neurons and reduces calcium activities. Furthermore, the Si diode film mounted on the brain of living mice can activate or suppress cortical activities under varied irradiation conditions. The presented material and device strategies reveal an innovated optoelectronic interface for precise neural modulations.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Silício / Optogenética / Neurônios Limite: Animals Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Silício / Optogenética / Neurônios Limite: Animals Idioma: En Ano de publicação: 2024 Tipo de documento: Article