Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei.

Afiliação

Luo H; Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Liang L; Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Cao H; Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Dai M; Department of New Energy Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.
Lu Y; §Department of Electrical and Computer Engineering, Rutgers University, Piscataway, New Jersey 08854, United States.
Wang M; Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China.

ACS Appl Mater Interfaces ; 7(31): 17023-31, 2015 Aug 12.

Article em En | MEDLINE | ID: mdl-26189702

Palavras-chave

CMOS-like inverters; SnO; ambipolar thin-film transistors; back-channel; passivation

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2015 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google