Chemical Vapor Deposition Growth of Few-Layer MoTe<sub>2</sub> in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe<sub>2</sub> Films.

Empante, Thomas A; Zhou, Yao; Klee, Velveth; Nguyen, Ariana E; Lu, I-Hsi; Valentin, Michael D; Naghibi Alvillar, Sepedeh A; Preciado, Edwin; Berges, Adam J; Merida, Cindy S; Gomez, Michael; Bobek, Sarah; Isarraraz, Miguel; Reed, Evan J; Bartels, Ludwig

Chemical Vapor Deposition Growth of Few-Layer MoTe₂ in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe₂ Films.

Empante, Thomas A; Zhou, Yao; Klee, Velveth; Nguyen, Ariana E; Lu, I-Hsi; Valentin, Michael D; Naghibi Alvillar, Sepedeh A; Preciado, Edwin; Berges, Adam J; Merida, Cindy S; Gomez, Michael; Bobek, Sarah; Isarraraz, Miguel; Reed, Evan J; Bartels, Ludwig.

Afiliação

Zhou Y; Department of Materials Science and Engineering, Stanford University , Stanford, California 94304, United States.
Reed EJ; Department of Materials Science and Engineering, Stanford University , Stanford, California 94304, United States.

ACS Nano ; 11(1): 900-905, 2017 01 24.

Article em En | MEDLINE | ID: mdl-27992719

Palavras-chave

chemical vapor deposition; metal semiconductor transition; phase change material; thin-layer materials; transition-metal dichalcogenides

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: ACS Nano Ano de publicação: 2017 Tipo de documento: Article País de publicação: Estados Unidos

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