An Overview of the Ultrawide Bandgap Ga<sub>2</sub>O<sub>3</sub> Semiconductor-Based Schottky Barrier Diode for Power Electronics Application.

Xue, HuiWen; He, QiMing; Jian, GuangZhong; Long, ShiBing; Pang, Tao; Liu, Ming

An Overview of the Ultrawide Bandgap Ga₂O₃ Semiconductor-Based Schottky Barrier Diode for Power Electronics Application.

Xue, HuiWen; He, QiMing; Jian, GuangZhong; Long, ShiBing; Pang, Tao; Liu, Ming.

Afiliação

Xue H; College of Mechanical and Electrical Engineering, Sichuan Agricultural University, Yaan, 625014, China.
He Q; Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China.
Jian G; Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China.
Long S; Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China.
Pang T; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China. shibinglong@ustc.edu.cn.
Liu M; College of Mechanical and Electrical Engineering, Sichuan Agricultural University, Yaan, 625014, China. 12773@sicau.edu.cn.

Nanoscale Res Lett ; 13(1): 290, 2018 Sep 19.

Article em En | MEDLINE | ID: mdl-30232628

Palavras-chave

Baliga's figure of merit; Breakdown electric field; Gallium oxide (Ga2O3); On-resistance; Power device; Schottky barrier diode (SBD); Ultrawide bandgap semiconductor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

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