Fabrication of capacitive pressure sensor using single crystal diamond cantilever beam.

Fu, Jiao; Zhu, Tianfei; Liang, Yan; Liu, Zhangcheng; Wang, Ruozheng; Zhang, Xiaofan; Wang, Hong-Xing

Fu, Jiao; Zhu, Tianfei; Liang, Yan; Liu, Zhangcheng; Wang, Ruozheng; Zhang, Xiaofan; Wang, Hong-Xing.

Afiliação

Fu J; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Zhu T; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Liang Y; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Liu Z; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Wang R; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Zhang X; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China.
Wang HX; Institute of Wide Band Gap Semiconductors, Xi'an Jiaotong University, Xi'an, China. hxwangcn@mail.xjtu.edu.cn.

Sci Rep ; 9(1): 4699, 2019 Mar 18.

Article em En | MEDLINE | ID: mdl-30886167

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Reino Unido

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