Nanodomain Engineering for Programmable Ferroelectric Devices.

Lipatov, Alexey; Li, Tao; Vorobeva, Nataliia S; Sinitskii, Alexander; Gruverman, Alexei

Lipatov, Alexey; Li, Tao; Vorobeva, Nataliia S; Sinitskii, Alexander; Gruverman, Alexei.

Afiliação

Lipatov A; Department of Chemistry , University of Nebraska , Lincoln , Nebraska 68588 , United States.
Li T; Department of Physics and Astronomy , University of Nebraska , Lincoln , Nebraska 68588 , United States.
Vorobeva NS; Centre for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , People's Republic of China.
Sinitskii A; Department of Chemistry , University of Nebraska , Lincoln , Nebraska 68588 , United States.
Gruverman A; Department of Chemistry , University of Nebraska , Lincoln , Nebraska 68588 , United States.

Nano Lett ; 19(5): 3194-3198, 2019 05 08.

Article em En | MEDLINE | ID: mdl-30943040

Palavras-chave

Molybdenum disulfide; domain patterning; ferroelectric memory; field-effect transistor (FET); lead zirconium titanate

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Estados Unidos

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