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Correction to: Wafer-Scale Fabrication of Sub-10 nm TiO2-Ga2O3 n-p Heterojunctions with Efficient Photocatalytic Activity by Atomic Layer Deposition.
Xu, Hongyan; Han, Feng; Xia, Chengkai; Wang, Siyan; Ramachandran, Ranjith K; Detavernier, Christophe; Wei, Minsong; Lin, Liwei; Zhuiykov, Serge.
Afiliação
  • Xu H; School of Materials Science and Engineering, North University of China, Taiyuan, 030051, People's Republic of China.
  • Han F; School of Materials Science and Engineering, North University of China, Taiyuan, 030051, People's Republic of China.
  • Xia C; School of Materials Science and Engineering, North University of China, Taiyuan, 030051, People's Republic of China.
  • Wang S; School of Materials Science and Engineering, North University of China, Taiyuan, 030051, People's Republic of China.
  • Ramachandran RK; Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000, Ghent, Belgium.
  • Detavernier C; Department of Solid State Science, Ghent University, Krijgslaan 281/S1, B-9000, Ghent, Belgium.
  • Wei M; Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
  • Lin L; Berkeley Sensor and Actuator Center, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
  • Zhuiykov S; School of Materials Science and Engineering, North University of China, Taiyuan, 030051, People's Republic of China. serge.zhuiykov@ugent.be.
Nanoscale Res Lett ; 14(1): 173, 2019 05 27.
Article em En | MEDLINE | ID: mdl-31134408

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2019 Tipo de documento: Article País de publicação: Estados Unidos