Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level.

Chen, Xue; Wang, Dengkui; Wang, Tuo; Yang, Zhenyu; Zou, Xuming; Wang, Peng; Luo, Wenjin; Li, Qing; Liao, Lei; Hu, Weida; Wei, Zhipeng

Chen, Xue; Wang, Dengkui; Wang, Tuo; Yang, Zhenyu; Zou, Xuming; Wang, Peng; Luo, Wenjin; Li, Qing; Liao, Lei; Hu, Weida; Wei, Zhipeng.

Afiliação

Chen X; State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China.
Wang D; State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China.
Wang T; State Key Laboratory of High Power Semiconductor Lasers , Changchun University of Science and Technology , Changchun 130022 , China.
Yang Z; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China.
Zou X; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China.
Wang P; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China.
Luo W; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China.
Li Q; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China.
Liao L; Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and Technology , Wuhan University , Wuhan 430072 , China.
Hu W; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics , Hunan University , Changsha 410082 , China.
Wei Z; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences , Shanghai 200083 , China.

ACS Appl Mater Interfaces ; 11(36): 33188-33193, 2019 Sep 11.

Article em En | MEDLINE | ID: mdl-31415147

Palavras-chave

Fermi level; GaAs nanowire photodetector; Schottky contact; built-in electric field; doping

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China País de publicação: Estados Unidos

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