Centrifugal-Gravity-Enforced Deposition of MXene Electrodes for High-Performance and Ultrastable Microsupercapacitors.

Two-dimensional (2D) transition metal carbides, known as MXenes, have captured much attention for their excellent electrical conductivity and electrochemical capability. However, the susceptibility of MXenes to oxidation, particularly Ti3C2Tx transforming into titanium dioxide upon exposure to ambient air, hinders their utilization for extended operational life cycles. This work introduces a simple and straightforward method for producing ultrathin MXene electrode films tailored for energy storage applications, employing centrifugal-gravity force. Our approach significantly suppresses the oxidation phenomenon that arises in MXene materials and also effectively prevents the recrystallization of potentially residual LiF during the film formation. Additionally, the utilization of this MXene electrode in an all-solid-state microsupercapacitor (MSC) with an interdigitated pattern demonstrates an exceptionally improved and stable electrochemical performance. This includes a high volumetric capacitance of approximately 467 F cm-3, an energy density of around 65 mWh cm-3, and impressive long-term cycle stability, retaining about 94% capacity after 10 000 cycles. Moreover, a downsized MSC device exhibits remarkable mechanical durability, retaining over 98% capacity even when folded and sustaining stability over extended periods. Therefore, we believe that this study provides valuable insights for advancing highly integrated energy storage devices, ensuring exceptional electrochemical efficiency and prolonged functionality in diverse environments, whether ambient or humid.

Bioinspired Synaptic Branched Network within Quasi-Solid Polymer Electrolyte for High-Performance Microsupercapacitors.

The branched network-driven ion solvating quasi-solid polymer electrolytes (QSPEs) are prepared via one-step photochemical reaction. A poly(ethylene glycol diacrylate) (PEGDA) is combined with an ion-conducting solvate ionic liquid (SIL), where tetraglyme (TEGDME), which acts like interneuron in the human brain and creates branching network points, is mixed with EMIM-NTf2 and Li-NTf2 . The QSPE exhibits a unique gyrified morphology, inspired by the cortical surface of human brain, and features well-refined nano-scale ion channels. This human-mimicking method offers excellent ion transport capabilities through a synaptic branched network with high ionic conductivity (σDC ≈ 1.8 mS cm-1 at 298 K), high dielectric constant (εs ≈ 125 at 298 K), and strong ion solvation ability, in addition to superior mechanical flexibility. Furthermore, the interdigitated microsupercapacitors (MSCs) based on the QSPE present excellent electrochemical performance of high energy (E  =  5.37 µWh cm-2 ) and power density (P  =  2.2 mW cm-2 ), long-term cycle stability (≈94% retention after 48 000 cycles), and mechanical stability (>94% retention after continuous bending and compressing deformation). Moreover, these MSC devices have flame-retarding properties and operate effectively in air and water across a wide temperature range (275 to 370 K), offering a promising foundation for high-performance, stable next-generation all-solid-state energy storage devices.

Machine Learning-Enabled Environmentally Adaptable Skin-Electronic Sensor for Human Gesture Recognition.

Stretchable sensors have been widely investigated and developed for the purpose of human motion detection, touch sensors, and healthcare monitoring, typically converting mechanical/structural deformation into electrical signals. The viscoelastic strain of stretchable materials often results in nonlinear stress-strain characteristics over a broad range of strains, consequently making the stretchable sensors at the body joints less accurate in predicting and recognizing human gestures. Accurate recognition of human gestures can be further deteriorated by environmental changes such as temperature and humidity. Here, we demonstrated an environment-adaptable high stress-strain linearity (up to ε = 150%) and high-durability (>100,000 cycles) stretchable sensor conformally laminated onto the body joints for human gesture recognition. The serpentine configuration of our ionic liquid-based stretchable film enabled us to construct broad data sets of mechanical strain and temperature changes for machine learning-based gesture recognition. Signal recognition and training of distinct strains and environmental stimuli using a machine learning-based algorithm analysis successfully measured and predicted the joint motion in a temperature-changing environment with an accuracy of 92.86% (R-squared). Therefore, we believe that our serpentine-shaped ion gel-based stretchable sensor harmonized with machine-learning analysis will be a significant achievement toward environmentally adaptive and multianalyte sensing applications. Our proposed machine learning-enabled multisensor system may enable the development of future electronic devices such as wearable electronics, soft robotics, electronic skin, and human-machine interaction systems.

Micropyramidal Flexible Ion Gel Sensor for Multianalyte Discrimination and Strain Compensation.

A highly sensitive and flexible gas sensor that can detect a wide range of chemicals is crucial for wearable applications. However, conventional single resistance-based flexible sensors face challenges in maintaining chemical sensitivity under mechanical stress and can be affected by interfering gases. This study presents a versatile approach for fabricating a micropyramidal flexible ion gel sensor, which accomplishes sub-ppm sensitivity (<80 ppb) at room temperature and discrimination capability between various analytes, including toluene, isobutylene, ammonia, ethanol, and humidity. The discrimination accuracy of our flexible sensor is as high as 95.86%, enhanced by using machine learning-based algorithms. Moreover, its sensing capability remains stable with only a 2.09% change from the flat state to a 6.5 mm bending radius, further amplifying its universal usage for wearable chemical sensing. Therefore, we envision that a micropyramidal flexible ion gel sensor platform assisted by machine learning-based algorithms will provide a new strategy toward next-generation wearable sensing technology.

Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate.

This study provides experimental evidence regarding the mechanism of gallium nitride (GaN) selective-area growth (SAG) on a polished plateau-patterned sapphire substrate (PP-PSS), on which aluminum nitride (AlN) buffer layers are deposited under the same deposition conditions. The SAG of GaN was only observed on the plateau region of the PP-PSS, irrespective of the number of growth cycles. Indirect samples deposited on the bare c-plane substrate were prepared to determine the difference between the AlN buffer layers in the plateau region and silicon oxide (SiO2). The AlN buffer layer in the plateau region exhibited a higher surface energy, and its crystal orientation is indicated by AlN [001]. In contrast, regions other than the plateau region did not exhibit crystallinity and presented lower surface energies. The direct analysis results of PP-PSS using transmission electron microscopy (TEM) and electron backscattered diffraction (EBSD) are similar to the results of the indirect samples. Therefore, under the same conditions, the GaN SAG of the deposited layer is related to crystallinity, crystal orientation, and surface energy.

High-Ionic-Conductivity Sodium-Based Ionic Gel Polymer Electrolyte for High-Performance and Ultrastable Microsupercapacitors.

Due to the lower cost and greater natural abundance of the sodium element on the earth than those of the lithium element, sodium-based ionic gel polymer electrolytes (IGPEs) are becoming a more cost-effective and popular material choice for portable and stationary energy solutions. The sodium-based IGPEs, however, appeared relatively inferior to their lithium-based counterparts for use in high-performance microsupercapacitors in terms of ionic conductivity and electrochemical stability. To tackle these issues, poly(ethylene glycol) diacrylate (PEGDA) with fast polymerization to build a polymer matrix and sodium perchlorate (NaClO4) with high chemical stability and high thermal stability are employed to generate free ions for an ionic conducting phase with the support of tetramethylene glycol ether (G4) and 1-ethyl-3-methylimidazolium bis(triflouromethylsulfonyl)imide (EMIM-TFSI). It was found that the ionic conductivity (σdc) of this sodium-based IGPE reaches up to 0.54 mS/cm at room temperature. To manifest a high-conductivity sodium-based IGPE (SIGPE), a microsupercapacitor (MSC) with an area of 5 mm2 is designed and fabricated on an interdigital reduced graphene oxide electrode. This MSC demonstrates prominent performance with a high power density of ∼2500 W/kg and a maximum energy density of ∼0.7 Wh/kg. Furthermore, after 20,000 cycles at an operating potential window from 0.0 to 1.0 V, it retains approximately 98.9% capacitance. An MSC array in 3 series × 3 parallels (3S × 3P) was successfully designed as a power source for a basic circuit with an LED. Therefore, we believe that our sodium-based IGPE microsupercapacitor holds its promising role as a solid-state energy source for high-performance and high-stability energy solutions.

Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes.

Electrical and optical characteristics of InGaN-based green micro-light-emitting diodes (µLEDs) with different active areas are investigated; results are as follows. Reverse and forward leakage currents of µLED increase as emission area is reduced owing to the non-radiative recombination process at the sidewall defects; this is more prominent in smaller µLED because of larger surface-to-volume ratio. Leakage currents of µLEDs deteriorate the carrier injection to light-emitting quantum wells, thereby degrading their external quantum efficiency. Reverse leakage current originate primarily from sidewall edges of the smallest device. Therefore, aggressive suppression of sidewall defects of µLEDs is essential for low-power and downscaled µLEDs.

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 to 2500 nm near-infrared illumination.

We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Exciton-Dominated Ultrafast Optical Response in Atomically Thin PtSe2.

Strongly bound excitons are a characteristic hallmark of 2D semiconductors, enabling unique light-matter interactions and novel optical applications. Platinum diselenide (PtSe2 ) is an emerging 2D material with outstanding optical and electrical properties and excellent air stability. Bulk PtSe2 is a semimetal, but its atomically thin form shows a semiconducting phase with the appearance of a band-gap, making one expect strongly bound 2D excitons. However, the excitons in PtSe2 have been barely studied, either experimentally or theoretically. Here, the authors directly observe and theoretically confirm excitons and their ultrafast dynamics in mono-, bi-, and tri-layer PtSe2 single crystals. Steady-state optical microscopy reveals exciton absorption resonances and their thickness dependence, confirmed by first-principles calculations. Ultrafast transient absorption microscopy finds that the exciton dominates the transient broadband response, resulting from strong exciton bleaching and renormalized band-gap-induced exciton shifting. The overall transient spectrum redshifts with increasing thickness as the shrinking band-gap redshifts the exciton resonance. This study provides novel insights into exciton photophysics in platinum dichalcogenides.

Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy.

Optimization and performance enhancement of a low-cost, solution-processed InGaZnO (IGZO) resistance random access memory (ReRAM) device using the manipulation of global and local oxygen vacancy (Vo) stoichiometry in metal oxide thin films was demonstrated. Control of the overall Ga composition within the IGZO thin film reduced the excessive formation of oxygen vacancies allowing for a reproducible resistance switching mechanism. Furthermore, sophisticated local control of stoichiometric Vo is achieved using a 5 nm Ni layer at the IGZO interface to serve as an oxygen capturing layer through the formation of NiOx, consequently facilitating the formation of conductive filaments (CFs) and preventing abrupt degradation of device performance. Additionally, reducing the cell dimension of the IGZO-based ReRAMs using a cross-bar electrode structure appeared to drastically improve their performances parameters, including operating voltage and resistance distribution due to the suppression of excessive CFs formation. The optimized ReRAM devices exhibited stable unipolar resistive switching behavior with an endurance of >200 cycles, a retention time of 104 s at 85 °C and an on/off ratio greater than about 102. Therefore, our findings address the demand for low-cost memory devices with high stability and endurance for next-generation data storage technology.

Highly Efficient Excitonic Recombination of Non-polar ([Formula: see text]) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy.

While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400‒500 nm and 680‒720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE non-polar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nano-photonic devices.

Does 'Manna from Heaven' help? The role of cash transfers in disaster recovery-lessons from Fiji after Tropical Cyclone Winston.

This paper contributes to the evidence on the effectiveness of shock-responsive social protection systems in helping affected households recover from the negative consequences of disasters. It evaluates the influence of the top-up cash transfers provided by the Government of Fiji to poor households in the wake of Tropical Cyclone Winston, which struck the Pacific Island country on 20 February 2016. The impact evaluation strategy incorporates a sharp regression discontinuity design to define treatment and control groups, based on the eligibility threshold of the poverty benefit scheme. The results indicate that treatment households-that is, those that received cash transfers-are significantly more likely to report quicker recovery from various shocks. Female-headed households are more likely to recover from the ramifications, whereas households with older heads are less likely to do so. The presence of a functioning market appears to be a major factor aiding the speed of recovery. Finally, the evidence points towards strong district effects on recovery.

Highly Flexible and Stable Solid-State Supercapacitors Based on a Homogeneous Thin Ion Gel Polymer Electrolyte Using a Poly(dimethylsiloxane) Stamp.

To achieve both high structural integrity and excellent ion transport, designing ion gel polymer electrolytes (IGPEs) composed of an ionic conducting phase and a mechanical supporting polymer matrix is one of the promising material strategies for the development of next-generation all-solid-state energy storage systems. Herein, we prepared an IGPE thin film, in which an ion-diffusing phase containing ionic liquids and lithium salts was bicontinuously intertwined with a cross-linked epoxy phase, using a silicon elastomer-based stamping method, thus producing a homogeneous IGPE-based thin film with low surface roughness (Rrms = 0.5 nm). Following the optimization of the IGPE thin film in terms of the concentrations of ionic constituents, the film thickness, and various process parameters, the IGPE itself showed a high ionic conductivity of 0.23 mS/cm with a low activation energy for lithium-ion transport, as well as the high capacitance of approximately 10 µF/cm2 based on the metal-insulator-metal configuration. Furthermore, an all-solid-state supercapacitor containing two IGPE coating-activated carbon electrodes produced using our poly(dimethylsiloxane) (PDMS) stamping method exhibited high energy and power densities (44 W h/kg at 875 W/kg and 28 kW/kg at 3 W h/kg). It was also found that this supercapacitor showed a dramatic reduction (more than 50%) of the current-resistance (IR) drop, which is an indicator of low interface resistance, while maintaining the initial electrochemical performance even after severe mechanical deformation such as bending or rolling. Therefore, all these results support the fact that our developed PDMS stamping method enables the rendering of a high-performance ion gel polymer thin-film-based electrolyte with acceptable stability and mechanical flexibility for all-solid-state wearable energy storage devices.

Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes.

The nature of reverse leakage current characteristics in InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN crystals detached from a Si substrate is investigated for the first time, using temperature-dependent current-voltage (T-I-V) measurement. It is found that the Si-based homoepitaxial InGaN/GaN LEDs exhibit a significant suppression of the reverse leakage current without any additional processes. Their conduction mechanism can be divided into variable-range hopping and nearest neighbor hopping (NNH) around 360 K, which is enhanced by Poole-Frenkel emission. The analysis of T-I-V curves of the homoepitaxial LEDs yields an activation energy of carriers of 35 meV at -10 V, about 50% higher than that of the conventional ones (Ea = 21 meV at -10 V). This suggests that our homoepitaxial InGaN/GaN LEDs bears the high activation energy as well as low threading dislocation density (about 1 × 106/cm2), effectively suppressing the reverse leakage current. We expect that this study will shed a light on the high reliability and carrier tunneling characteristics of the homoepitaxial InGaN/GaN blue LEDs produced from a Si substrate and also envision a promising future for their successful adoption by LED community via cost-effective homoepitaxial fabrication of LEDs.

Nano Pt-decorated transparent solution-processed oxide semiconductor sensor with ppm detection capability.

In this study, we fabricated a transparent Pt-decorated indium gallium zinc oxide (IGZO) thin film based on a solution process to demonstrate a portable, low-cost volatile organic compound (VOC) based real-time monitoring system with the detection capability at as low as 1 ppm. The Pt/IGZO sensor shows remarkable response characteristics upon exposure of isobutylene (2-methylpropene) gas down to 1 ppm while also maintaining the reliability and reproducibility of the sensing capability, which is almost comparable to a commercial VOC sensor based on a photoionization detector (PID) method. For 1 ppm of isobutylene gas, the response and recovery time of the sensor estimated were as low as 25 s (S 90) and 80 s (R 90), respectively. The catalytic activity of Pt nanoparticles on an IGZO nano-thin film plays a key role in drastically enhancing the sensitivity and dynamic response behaviour of the VOC sensor. Furthermore, the solution-processed IGZO thin film decorated with Pt nanoparticles also represents a highly transparent (in visible region, ∼90%) and low-cost fabrication platform, thereby, facilitating the optical visibility and disposability for future applications in the field of electronics. Therefore, we believe that the nano-Pt/IGZO hybrid material for VOC sensor developed by us will pave a way to detect any harmful chemical gases and VOCs in various environments.

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate.

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current⁻voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.

Manipulation and Investigation of Uniformly-Spaced Nanowire Array on a Substrate via Dielectrophoresis and Electrostatic Interaction.

Directed-assembly of nanowires on the dielectrics-covered parallel electrode structure is capable of producing uniformly-spaced nanowire array at the electrode gap due to dielectrophoretic nanowire attraction and electrostatic nanowire repulsion. Beyond uniformly-spaced nanowire array formation, the control of spacing in the array is beneficial in that it should be the experimental basis of the precise positioning of functional nanowires on a circuit. Here, we investigate the material parameters and bias conditions to modulate the nanowire spacing in the ordered array, where the nanowire array formation is readily attained due to the electrostatic nanowire interaction. A theoretical model for the force calculation and the simulation of the induced charge in the assembled nanowire verifies that the longer nanowires on thicker dielectric layer tend to be assembled with a larger pitch due to the stronger nanowire-nanowire electrostatic repulsion, which is consistent with the experimental results. It was claimed that the stronger dielectrophoretic force is likely to attract more nanowires that are suspended in solution at the electrode gap, causing them to be less-spaced. Thus, we propose a generic mechanism, competition of dielectrophoretic and electrostatic force, to determine the nanowire pitch in an ordered array. Furthermore, this spacing-controlled nanowire array offers a way to fabricate the high-density nanodevice array without nanowire registration.

High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes.

We report a general strategy for obtaining high-quality, large-area metal-chalcogenide semiconductor films from precursors combining chelated metal salts with chalcoureas or chalcoamides. Using conventional organic solvents, such precursors enable the expeditious formation of chalco-gels, which are easily transformed into the corresponding high-performance metal-chalcogenide thin films with large, uniform areas. Diverse metal chalcogenides and their alloys (MQ x : M = Zn, Cd, In, Sb, Pb; Q = S, Se, Te) are successfully synthesized at relatively low processing temperatures (<400°C). The versatility of this scalable route is demonstrated by the fabrication of large-area thin-film transistors (TFTs), optoelectronic devices, and integrated circuits on a 4-inch Si wafer and 2.5-inch borosilicate glass substrates in ambient air using CdS, CdSe, and In2Se3 active layers. The CdSe TFTs exhibit a maximum field-effect mobility greater than 300 cm2 V-1 s-1 with an on/off current ratio of >107 and good operational stability (threshold voltage shift < 0.5 V at a positive gate bias stress of 10 ks). In addition, metal chalcogenide-based phototransistors with a photodetectivity of >1013 Jones and seven-stage ring oscillators operating at a speed of ~2.6 MHz (propagation delay of < 27 ns per stage) are demonstrated.

High-performance organic circuits based on precisely aligned single-crystal arrays.

In this paper, we demonstrate high-performance organic logic circuits based on precisely controlled organic single-crystal arrays. Well-aligned microrod shaped 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) single-crystal organic thin-film-transistors (OTFTs) were fabricated via solvent mediated molecular tailoring with a polymeric sacrificial layer, exhibiting saturation mobility of >2 cm2 V-1 s-1. Using this approach, precise placement of organic crystal arrays in a controlled orientation was successfully achieved, enabling the fabrication of OTFT-based inverter circuits with a gain of 1.37 (V V-1). Furthermore, it was demonstrated that, by varying the number of single-crystal microrods, the device dimension and corresponding circuit performance can be modulated. A high-performance inverter operation with various interdigitating single-crystal microrod arrays can thus be achieved.

Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction.

Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%). Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.