Analytical technique for self-absorption structure of iron L-emission spectra obtained by soft X-ray emission spectrometer.

The method deriving the L self-absorption spectrum from Lα,ß emission spectra obtained at different accelerating voltages has been optimized for analyzing the chemical state of Fe in solid materials. Fe Lα,ß emission spectra obtained are fitted using Pseudo-Voigt functions and normalized by the integrated intensity of each Fe Ll line, which is not affected by L2,3 absorption edge. The self-absorption spectrum is calculated by dividing the normalized intensity profile collected at low accelerating voltage by that collected at a higher accelerating voltage. The obtained profile is referred to as soft X-ray self-absorption structure (SX-SAS). This method is applied to six Fe-based materials (Fe metal, FeO, Fe3O4, Fe2O3, FeS and FeS2) to observe different chemical states of Fe in those materials. By comparing the self-absorption spectra of iron oxides, one can observe the L3 absorption peak structure shows a shift to the higher energy side as ferric (3+) Fe increases with respect to ferrous (+2) Fe. The intensity profiles of self-absorption spectra of metallic Fe and FeS2 shows shoulder structures between the L3 and L2 absorption peaks, which were not observed in spectra of Fe oxides. These results indicate that the SX-SAS technique is useful to examine X-ray absorption structure as a means to understand the chemical states of transition metal elements.

Non-negative matrix factorization for mining big data obtained using four-dimensional scanning transmission electron microscopy.

Scientific instruments for material characterization have recently been improved to yield big data. For instance, scanning transmission electron microscopy (STEM) allows us to acquire many diffraction patterns from a scanning area, which is referred to as four-dimensional (4D) STEM. Here we study a combination of 4D-STEM and a statistical technique called non-negative matrix factorization (NMF) to deduce sparse diffraction patterns from a 4D-STEM data consisting of 10,000 diffraction patterns. Titanium oxide nanosheets are analyzed using this combined technique, and we discriminate the two diffraction patterns from pristine TiO2 and reduced Ti2O3 areas, where the latter is due to topotactic reduction induced by electron irradiation. The combination of NMF and 4D-STEM is expected to become a standard characterization technique for a wide range materials.

Reversible Switching of the Magnetic Orientation of Titanate Nanosheets by Photochemical Reduction and Autoxidation.

Optical properties of aqueous colloidal dispersions of 2D electrolytes, if their aspect ratios are extra-large, can be determined by their orientation preferences. Recently, we reported that a colloidal dispersion of diamagnetic titanate(IV) nanosheets (TiIVNSs), when placed in a magnetic field, is highly anisotropic because TiIVNS anomalously orients its 2D plane orthogonal to the magnetic flux lines due to its large anisotropic magnetic susceptibility. Herein, we report a serendipitous finding that TiIVNSs can be in situ photochemically reduced into a paramagnetic species (TiIV/IIINSs), so that their preference of magnetic orientation changes from orthogonal to parallel. This transition distinctly alters the structural anisotropy and therefore optical appearance of the colloidal dispersion in a magnetic field. We also found that TiIV/IIINSs is autoxidized back to TiIVNSs under non-deaerated conditions. By using an elaborate setup, the dispersion of TiIVNSs serves as an optical switch remotely operable by magnet and light.

High-Mobility p-Type and n-Type Copper Nitride Semiconductors by Direct Nitriding Synthesis and In Silico Doping Design.

Thin-film photovoltaics (PV) have emerged as a technology that can meet the growing demands for efficient and low-cost large-scale cells. However, the photoabsorbers currently in use contain expensive or toxic elements, and the difficulty in bipolar doping, particularly in a device structure, requires elaborate optimization of the heterostructures for improving the efficiency. This study shows that bipolar doping with high hole and electron mobilities in copper nitride (Cu3 N), composed solely of earth-abundant and environmentally benign elements, is readily available through a novel gaseous direct nitriding reaction applicable to uniform and large-area deposition. A high-quality undoped Cu3 N film is essentially an n-type semiconductor, while p-type conductivity is realized by interstitial fluorine doping, as predicted using density functional theory calculations and directly proven by atomically resolved imaging. The synthetic methodology for high-quality p-type and n-type films paves the way for the application of Cu3 N as an alternative absorber in thin-film PV.

Soft X-ray emission spectroscopy study of electronic structure of sodium borosilicide Na8B74.5Si17.5.

Chemical bonding state of sodium borosilicide Na8B74.5Si17.5, which is a new member of B12-cluster materials, is investigated by soft X-ray emission spectroscopy. The material is composed of B12 cluster network and characteristic silicon chains of [-Si-(Si-Si)3-Si-] connected by sp3 bonding, in which bonding distances and bonding angles are close to those in cubic Si crystal. B K-emission spectrum of the material showed a similar but a broader intensity distribution with those of B12 cluster materials of α-r-B, B4C and ß-r-B. The broader intensity distribution can be due to a variation of B-B bond length in B12 cluster. The density of states (DOS) of silicon chains of [-Si-(Si-Si)3-Si-] was experimentally derived. It shows a similar energy width, and peak or shoulder structures in intensity distribution with those of L-emission spectrum of cubic Si. From comparisons between experimental spectra and corresponding calculated DOS, covalent bonding between Si chain and B12 cluster network is suggested. Those are discussed by using a theoretically calculated density of state of Na8B74.5Si17.5 by using WIEN2k code.

Improvement of effective solid angle using virtual-pivot holder and large EDS detector.

This paper describes the effective solid angle improvement achieved using a large-area silicon drift detector together with a virtual-pivot double-tilt specimen holder. The virtual-pivot mechanism enables various designs of specimen-retaining and can reduce the shadowing effect. Energy-dispersive X-ray spectra were measured and converted into effective solid angles using different types of specimen holders and specimens. The investigated shadowing-free mechanical system yielded effective solid angles approaching the nominal solid angle of 0.464sr. In addition, we have demonstrated the availability of the plastic (polyetheretherketone) specimen holder for low system noise.

Microscopic observation of dye molecules for solar cells on a titania surface.

The lateral distribution and coverage of Ru-based dye molecules, which are used for dye-sensitized solar cells (DSCs), were directly examined on a titania surface using high-resolution scanning transmission electron microscopy (STEM). The clean surface of a free-standing titania nanosheet was first confirmed with atomic resolution, and then, the nanosheet was used as a substrate. A single dye molecule on the titania nanosheet was visualized for the first time. The quantitative STEM images revealed an inhomogeneous dye-molecule distribution at the early stage of its absorption, i.e., the aggregation of the dye molecules. The majority of the titania surface was not covered by dye molecules, suggesting that optimization of the dye molecule distribution could yield further improvement of the DSC conversion efficiencies.

Quantitative annular dark-field imaging of single-layer graphene-II: atomic-resolution image contrast.

We have investigated how accurately atomic-resolution annular dark-field (ADF) images match between experiments and simulations to conduct more reliable crystal structure analyses. Quantitative ADF imaging, in which the ADF intensity at each pixel represents the fraction of the incident probe current, allows us to perform direct comparisons with simulations without the use of fitting parameters. Although the conventional comparison suffers from experimental uncertainties such as an amorphous surface layer and specimen thickness, in this study we eliminated such uncertainties by using a single-layer graphene as a specimen. Furthermore, to reduce image distortion and shot noises in experimental images, multiple acquisitions with drift correction were performed, and the atomic ADF contrast was quantitatively acquired. To reproduce the experimental ADF contrast, we used three distribution functions as the effective source distribution in simulations. The optimum distribution function and its full-width at half-maximum were evaluated by measuring the residuals between the experimental and simulated images. It was found that the experimental images could be explained well by a linear combination of a Gaussian function and a Lorentzian function with a longer tail than the Gaussian function.

Quantitative annular dark-field imaging of single-layer graphene.

A quantification procedure for annular dark-field (ADF) imaging, in which a quantitative contrast is given as a scattering intensity normalized by an incident probe current, is presented. The obtained ADF images are converted to quantitative ADF images using an empirical equation, which is a function of an ADF imaging system setting. The quantification procedure fully implements the nonlinear response of the ADF imaging system, which is critical in high-sensitivity observation. We applied the procedure for observation of a graphene specimen with 1-4 layers. The inner and outer angles of an ADF detector, which are important parameters in quantitative analyses, were precisely measured. The quantitative contrast of ADF images was in agreement with that of simulated images, and the quantitative ADF imaging allowed us to directly count the number of graphene layers.

Chemical state information of bulk specimens obtained by SEM-based soft-X-ray emission spectrometry.

Electron-beam-induced soft-X-ray emission spectroscopy (SXES) that uses a grating spectrometer has been introduced to a conventional scanning electron microscope (SEM) for characterizing desired specimen areas of bulk materials. The spectrometer was designed as a grazing incidence flat-field optics by using aberration corrected (varied line spacing) gratings and a multichannel plate detector combined with a charge-coupled device camera, which has already been applied to a transmission electron microscope. The best resolution was confirmed as 0.13 eV at Mg L-emission (50 eV), which is comparable with that of recent dedicated electron energy-loss spectroscopy instruments. This SXES-SEM instrument presents density of states of simple metals of bulk Mg and Li. Apparent band-structure effects have been observed in Si L-emission of Si wafer, P L-emission of GaP wafer, and Al L-emissions of intermetallic compounds of AlCo, AlPd, Al2Pt, and Al2Au.